NP110N055PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
C iss
3
C oss
2
1000
1
V GS = 10 V
I D = 55 A
V GS = 0 V
C rss
0
Pulsed
100
f = 1 MHz
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
60
12
50
V DD = 44 V
28 V
10
100
10
V DD = 28 V
V GS = 10 V
t d(off)
t d(on)
t r
t f
40
30
20
10
11 V
V DS
V GS
8
6
4
2
1
R G = 0 Ω
0
I D = 110 A
0
0.1
1
10
100
1000
0
20
40
60
80
100 120 140 160
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
0V
1000
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
V GS = 10 V
10
1
di/dt = 100 A/ μ s
0.1
Pulsed
1
V GS = 0 V
0
0.5
1
1.5
0.1
1
10
100
1000
V F(S-D) - Source to Drain Voltage - V
Data Sheet D19731EJ1V0DS
I F - Diode Forward Current - A
5
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相关代理商/技术参数
NP110N055PUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N055PUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263
NP111-273K 制造商:YAMAICHI 功能描述: 制造商:Yamaichi Electronics 功能描述:
NP112 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BR
NP112AL 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, AL
NP112BK 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BK
NP112GY 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, GY
NP112I 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, IV